FET Industrial Talk Highlights Breakthroughs in GaN Technology

An industrial talk titled “Say Goodbye to Silicon – How GaN is Changing Electronics” was recently attended by students and staff members from the Faculty of Engineering and Technology (FET). The talk aimed to expose students to emerging developments in semiconductor and power electronics technology.

Featuring Mr. Adrian Kok, Principal Power Test at AccoTEST Global, the talk highlighted the growing importance of Gallium Nitride (GaN) as a next-generation material, offering significant advantages over traditional silicon in terms of efficiency, switching speed, and thermal performance. The speaker also touched on Silicon Carbide (SiC), another important material shaping the future of high-performance electronics.

Mr. Kok further highlighted how these technologies are being applied across industries, particularly in data centre power systems, electric and hybrid vehicles, robotics, fast-charging solutions, and AI-driven applications. Organised by the FET Engineering Society (EngSoc) in collaboration with the FET Industrial Linkage Committee, the session gave students exposure to current industry trends and reinforced the relevance of advanced semiconductor technologies in shaping the future of electronics and engineering innovation.